五、代表性论文:
1. Z. G. Yu, J. Sun, M. B. Sullivana, Y. W. Zhang, H. Gong, D. J. Singh, ‘Dopant chemical potential modulation on oxygen vacancies formation in In2O3: A comparative density functional study’ Chem. Phys. Lett. 621, 141 (2014).
2. J. Sun, Z. G. Yu, Y. H. Huang, Y. J. Xia, W. S. Lai, and H. Gong, ‘Significant improvement in electronic properties of transparent amorphous indium zinc oxide through yttrium doping,’ Europhys. Lett. 106, 17066 (2014).
3. J. Sun, W. F. Yang, Y. H. Huang, W. S. Lai, A. Y. S. Lee, C. F. Wang, and H. Gong, ‘Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature,’ J. Appl. Phys. 112, 083709 (2012).
4. J. Sun, H. Gong, W. S. Lai, and W. F. Yang, ‘Improved conductivity and low temperature resistivity anomaly of a GeO2 incorporated indium zinc oxide system,’ Europhys. Lett. 100, 17003 (2012).
5. W. F. Yang, Y. N. Xie, R. Y. Liao, J. Sun, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, Alex Y. S. Lee, and H. Gong, ‘Enhancement of bandgap emission of Pt-capped ZnMgO films: Important role of light extraction versus exciton-plasmon coupling,’ Opt. Express 20, 14556 (2012).
6. J. Sun, W. S. Lai and H. Gong, Conductivity mechanism of nanosized silver layer embedded in indium zinc oxide. J. Appl. Phys. 111, 083712 (2012).
7. J. Sun, Y. H. Huang, and H. Gong, Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system. J. Appl. Phys. 110, 023709 (2011).
8. J. Sun and H. Gong, Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxide. Appl. Phys. Lett. 97, 092106 (2010).
9. F. C. Jia, Y. Z. Bai, F. Qu, J. Sun, J. J. Zhao, X. Jiang, The influence of gas pressure and bias current on the crystallinity of highly boron-doped diamond films, New Carbon Materials, 25, 357 (2010).
10. J. Sun, Y. Z. Bai, T. P. Yang, J. C. Sun, G. T. Du, and X. Jiang, Structural and electrical properties of ZnO films on freestanding thick diamond films. Chin. Sci. Bull. 53, 2931 (2008).
11. J. Sun, Y. Z. Bai, T. P. Yang, J. C. Sun, G. T. Du, H. H. Wu, Preparation and characteristics of ZnO films on freestanding diamond substrates. Diam. Rel. Mater. 16, 1597 (2007).
12. J. Sun, Y. Z. Bai, T. P. Yang, Y. B. Xu, X. S. Wang, G. T. Du, and H. H. Wu, Deposition of ZnO films on freestanding CVD thick diamond films. Chin. Phys. Lett. 23, 1321 (2006).
六、参加学术会议:
1. J. Sun*, Foreign Elements incorporated Indium Zinc Oxide Transparent Semiconductors/Conductors，ICCME 2014，China，2014.12.，Keynote speech (大会主题演讲)
2. J. Sun*, Foreign Elements incorporated Indium Zinc Oxide Transparent Semiconductors/Conductors，EMN Summer，Mexico，2014.06.，inviting talk（大会邀请报告）
3. H. Gong*, J. Sun, Effects of Foreign Elements incorporation in amorphous indium zinc oxide (IZO), 2rd international symposium on transparent conducting coating: display and solar，Korea，2012.10.4，inviting talk
4. J. Sun*, Y. H. Huang, H. Gong, Improved Mobility and Conductivity of an Al2O3 Incorporated Indium Zinc Oxide System, International Conference of Young Researchers on Advanced Materials, Singapore，2012.07.，poster
5. J. Sun*, Novel semiconducting or conducting amorphous multicomponent metal oxide and their applications in flexible electronics，CHINAOCS2012, China，2012.06.，poster
6. H. Gong*, D. J. Blackwood, G. X. Hu, J. Sun, The study of indium zinc oxide (IZO), a material that can combine with porous silicon to form white light emitting diodes, Trends in Nanotechnology International Conference, Spain, 2011.11，inviting talk
7. J. Sun*, H. Gong, Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxide, TOEO-7, Japan, 2011.03，poster
七、联系方式
通讯地址：湖北省武汉市洪山区鲁磨路388号，中国地质大学（武汉），材料与化学学院
邮编：430074
E-mail: sunjian516@gmail.com
（欢迎致力于纳米、半导体材料及器件研究的学生攻读硕士学位！硕士期间优秀者有机会推荐到新加坡国立大学攻读博士学位！）
