孙 剑

发布人:发表时间:2017-05-11点击:

 

 

 

 

 

一、个人简介

  孙剑,副教授,硕士生导师。2008年至2012年在新加坡国立大学(2013/14QS世界大学排名24)攻读博士和从事博士后研究。主要研究方向包括透明导电薄膜、纳米结构等新型功能薄膜材料,柔性纤维素纸等柔性基板材料,以及太阳能电池、TFT等相关器件。在Appl. Phys. Lett., J. Appl. Phys., Europhys. Lett., Opt. Express等国际著名杂志上发表学术论文16篇,其中第一作者13篇。20136月至今就职于中国地质大学(武汉)材化学院。

二、教育和工作经历

2013/06 – 至今,     中国地质大学(武汉)
2012/08 2012/12,新加坡国立大学,Research Scientist
2008/08 2012/08,新加坡国立大学,博士

三、主要研究方向:

1. 多元n型透明导电薄膜的制备和性能机理研究;
2. 透明导电薄膜在太阳能电池、TFT中的应用;
3. p型透明导电薄膜的制备和应用探索;

4.  柔性纤维素纸等柔性基板材料
5. /微米材料的制备和机理研究。

四、主持项目

1. 国家自然科学基金青年科学基金项目,柔性衬底上p型氧化铜、氧化锡基透明导电薄膜的制备及机理研究2015-2017

2. 湖北省自然科学基金面上项目青年基金项目,“透明纳米纤维素纸及其与氧化锌基透明导电氧化物的匹配度研究”,2014-2015

3. 中央高校基本科研业务费专项资金杰出人才培育基金,“无铟多元n型透明导电氧化物的制备和性能研究”,2013-2016

4. 湖北省高等学校青年教师深入企业行动计划项目,太阳能电池组件透明电极的调研工作 2014

五、代表性论文:

1.        Z. G. Yu, J. Sun, M. B. Sullivana, Y. W. Zhang, H. Gong, D. J. Singh, ‘Dopant chemical potential modulation on oxygen vacancies formation in In2O3: A comparative density functional study’ Chem. Phys. Lett. 621, 141 (2014).

2.        J. Sun, Z. G. Yu, Y. H. Huang, Y. J. Xia, W. S. Lai, and H. Gong, ‘Significant improvement in electronic properties of transparent amorphous indium zinc oxide through yttrium doping,’ Europhys. Lett. 106, 17066 (2014).

3.        J. Sun, W. F. Yang, Y. H. Huang, W. S. Lai, A. Y. S. Lee, C. F. Wang, and H. Gong, ‘Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature,’ J. Appl. Phys. 112, 083709 (2012).

4.        J. Sun, H. Gong, W. S. Lai, and W. F. Yang, ‘Improved conductivity and low temperature resistivity anomaly of a GeO2 incorporated indium zinc oxide system, Europhys. Lett. 100, 17003 (2012).

5.        W. F. Yang, Y. N. Xie, R. Y. Liao, J. Sun, Z. Y. Wu, L. M. Wong, S. J. Wang, C. F. Wang, Alex Y. S. Lee, and H. Gong, ‘Enhancement of bandgap emission of Pt-capped ZnMgO films: Important role of light extraction versus exciton-plasmon coupling,’ Opt. Express 20, 14556 (2012).

6.        J. Sun, W. S. Lai and H. Gong, Conductivity mechanism of nanosized silver layer embedded in indium zinc oxide. J. Appl. Phys. 111, 083712 (2012).

7.        J. Sun, Y. H. Huang, and H. Gong, Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system. J. Appl. Phys. 110, 023709 (2011).

8.        J. Sun and H. Gong, Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxide. Appl. Phys. Lett. 97, 092106 (2010).

9.        F. C. Jia, Y. Z. Bai, F. Qu, J. Sun, J. J. Zhao, X. Jiang, The influence of gas pressure and bias current on the crystallinity of highly boron-doped diamond films, New Carbon Materials, 25, 357 (2010).

10.    J. Sun, Y. Z. Bai, T. P. Yang, J. C. Sun, G. T. Du, and X. Jiang, Structural and electrical properties of ZnO films on freestanding thick diamond films. Chin. Sci. Bull. 53, 2931 (2008).

11.    J. Sun, Y. Z. Bai, T. P. Yang, J. C. Sun, G. T. Du, H. H. Wu, Preparation and characteristics of ZnO films on freestanding diamond substrates. Diam. Rel. Mater. 16, 1597 (2007).

12.    J. Sun, Y. Z. Bai, T. P. Yang, Y. B. Xu, X. S. Wang, G. T. Du, and H. H. Wu, Deposition of ZnO films on freestanding CVD thick diamond films. Chin. Phys. Lett. 23, 1321 (2006).

六、参加学术会议:

1.        J. Sun*, Foreign Elements incorporated Indium Zinc Oxide Transparent Semiconductors/ConductorsICCME 2014China2014.12.Keynote speech (大会主题演讲)

2.        J. Sun*, Foreign Elements incorporated Indium Zinc Oxide Transparent Semiconductors/ConductorsEMN SummerMexico2014.06.inviting talk(大会邀请报告)

3.        H. Gong*, J. Sun, Effects of Foreign Elements incorporation in amorphous indium zinc oxide (IZO), 2rd international symposium on transparent conducting coating: display and solarKorea2012.10.4inviting talk

4.        J. Sun*, Y. H. Huang, H. Gong, Improved Mobility and Conductivity of an Al2O3 Incorporated Indium Zinc Oxide System, International Conference of Young Researchers on Advanced Materials, Singapore2012.07.poster

5.        J. Sun*, Novel semiconducting or conducting amorphous multicomponent metal oxide and their applications in flexible electronicsCHINAOCS2012, China2012.06.poster

6.        H. Gong*, D. J. Blackwood, G. X. Hu, J. Sun, The study of indium zinc oxide (IZO), a material that can combine with porous silicon to form white light emitting diodes, Trends in Nanotechnology International Conference, Spain, 2011.11inviting talk

7.        J. Sun*, H. Gong, Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxide, TOEO-7, Japan, 2011.03poster

七、联系方式

     通讯地址:湖北省武汉市洪山区鲁磨路388号,中国地质大学(武汉),材料与化学学院
邮编:430074
E-mail:
sunjian516@gmail.com

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